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Preliminary Technical Information
LinearL2 TM Power
MOSFET w/Extended
FBSOA
IXTK60N50L2
IXTX60N50L2
V DSS
I D25
R DS(on)
= 500V
= 60A
< 100m Ω
N-Channel Enhancement Mode
Avalanche Rated
TO-264
Symbol
Test Conditions
Maximum Ratings
V DSS
T J = 25 ° C to 150 ° C
500
V
V DGR
V GSS
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Continuous
500
± 30
V
V
G
D
S
(TAB)
V GSM
Transient
± 40
V
I D25
I DM
I A
E AS
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
60
150
60
3
A
A
A
J
PLUS247
P D
T J
T JM
T C = 25 ° C
960
-55...+150
150
W
° C
° C
G
D
S
(TAB)
T stg
-55...+150
° C
G = Gate
D = Drain
T L
T SOLD
M d
1.6mm (0.063 in.) from case for 10s
Plastic body for 10s
Mounting torque (IXTK)
300
260
1.13/10
° C
° C
Nm/lb.in.
S = Source
TAB = Drain
F C
Weight
Mounting Force (IXTX)
TO-264
PLUS247
20..120 / 4.5..27
10
6
N/lb.
g
g
Features
Designed for linear operation
International standard packages
Avalanche rated
Guaranteed FBSOA at 75 ° C
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
BV DSS V GS = 0V, I D = 1mA
Characteristic Values
Min. Typ. Max.
500 V
Advantages
? Easy to mount
? Space savings
? High power density
Applications
V GS(th)
I GSS
V DS = V GS , I D = 250 μ A
V GS = ± 30V, V DS = 0V
2.5
4.5
± 200
V
nA
Solid state circuit breakers
Soft start controls
Linear amplifiers
I DSS
V DS = V DSS
V GS = 0V
T J = 125 ° C
50 μ A
5 mA
Programmable loads
Current regulators
R DS(on)
V GS = 10V, I D = 0.5 ? I D25 , Note 1
100
m Ω
? 2008 IXYS CORPORATION, All rights reserved
DS100087(12/08)
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